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大纲

Day1

功率半导体器件--概述
Power Semiconductor Devices — an Overview

功率器件和功率集成电路简介-历史回顾
Introduction to Power Devices, Power ICs — a Historical Perspective

分立和集成功率半导体器件
Discrete and Integrated Power Semiconductor Devices

功率MOSFETs, IGBTs
Power MOSFETs, IGBTs

FOM、SOA和可靠性
FOM, SOA and Reliability

功率输出级
Power Output Stage

功率集成电路技术的发展
Evolution of Power IC Technology

半导体行业和后摩尔时代
The Semiconductor Industry and More than Moore

氮化镓和碳化硅功率技术 GaN and SiC Power Technology

氮化镓和碳化硅材料性能
GaN and SiC Material Properties

耗尽和增强型GaN功率HEMTs
Depletion and Enhancement Mode GaN Power HEMTs

共源共栅结构
Cascode Configuration

集成GaN输出级/前置驱动器
Integrated GaN Output Stage/Pre-driver

基本棚极驱动注意事项
Basic Gate Drive Considerations

功率MOSEFTs和IGBTs的开关特性
Switching Behavior of Power MOSEFTs and IGBTs

栅极电荷和米勒平台
Gate Charge and Miller Plateau

栅极驱动功率损失
Gate Drive Power Loss

基本栅极驱动电路和栅极电阻
Basic Gate Drive Circuits and Gate Resistors

棚极电阻
Gate resistor

半桥和全桥的低侧和高侧驱动器
Low-side and High-side Drivers for Half and Full-bridges

自举电源
Bootstrap Power Supply

电平转换和隔离
Level Shifting and Isolation

低侧到高侧通信
Low-side to High-side Communication

dv/dt, di/dt，振铃振荡
dv/dt, di/dt, and Ringing Oscillation

死区时间
Dead-time

UVLO保护
UVLO Protection

Day2

智能棚极驱动芯片
Smart Gate Driver ICs

定制设计vs.现成的驱动集成电路
Custom Design versus Off the Shelf Driver ICs

动态棚极驱动
Dynamic Gate Drive

电流传感/故障检测
Current Sensing/Fault Detection

并联操作/浪涌抑制
Parallel Operation/Surge Suppression

dv/dt, di/dt控制
dv/dt, di/dt Controls

EMI抑制
EMI Suppression

体二极管导电和反向导电
Body-Diode Conduction and Reverse Conduction

死区时间校正
Dead-time Correction

用于d型GaN晶体管的集成cascode栅极驱动器
Integrated Cascode Gate Drivers for D-mode GaN Transistors

用于E型GaN晶体管的集成栅极驱动器
Integrated Gate Drivers for E-mode GaN Transistors

Co-packaged电源模块
Co-packaged Power Modules

智能电源模块的未来发展趋势
Future Trends on Intelligent Power Modules

商用棚极驱动芯片
Commercial Gate Driver ICs

栅极电流源/电流沉
Gate Current Sourcing/Sinking

栅极电阻的选择
Gate Resistor Selection

硅器件的栅极驱动器
Gate Drivers for Silicon Devices